Indirect switching and sensing of phase change memory cells
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United States of America Patent
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Mar 7, 2006
Grant Date -
Dec 1, 2005
app pub date -
May 28, 2004
filing date -
May 28, 2004
priority date (Note) -
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Abstract
A method and structure for a memory cell comprising a phase change material; a heating element in thermal contact with the phase change material, wherein the heating element is adapted to induce a phase change in the phase change material; and electrical lines configured to pass current through the heating element, wherein the phase change material and the heating element are arranged in a configuration other than being electrically connected in series. The memory cell further comprises a sensing element in thermal contact with the phase change material, wherein the sensing element is adapted to detect a change in at least one physical property of the phase change material, wherein the sensing element is adapted to detect a change in a thermal conductivity of the phase change material.
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