Method for manufacturing a semiconductor device for use in a memory cell that includes forming a composite layer of tantalum oxide and titanium oxide over a bottom capacitor electrode
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United States of America Patent
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Mar 14, 2006
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N/A
app pub date -
Dec 8, 2003
filing date -
Dec 22, 1999
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Abstract
A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of bottom electrodes formed on top of the conductive plugs, composite films formed on the bottom electrodes and Al2O3 films formed on the composite films. In the device, the composite films are made of (Ta2O5)0.92 (TiO2)0.08 by using an atomic layer deposition (ALD).
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