Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof
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United States of America Patent
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Mar 14, 2006
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app pub date -
May 29, 2001
filing date -
Nov 30, 1999
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Abstract
A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.
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