Recording mark formation in a phase change memory material via a predominately capacitive cooling process
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 14, 2006
Grant Date -
Aug 22, 2002
app pub date -
Dec 21, 2001
filing date -
Dec 22, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Methods of writing information to an optical memory device. The methods comprise the step of writing a mark to the active material of the optical memory device by irradiating the material with an applied energy source. In one embodiment, the applied energy source provides a plurality of energy pulses. In another embodiment, energy in excess of that required to form a mark is released and dissipated in a manner that minimizes mark enlargement, spurious mark formation, recrystallization and back crystallization. The methods are effective to provide better cooling characteristics through enhancement of the capacitive cooling contribution.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully