MEMS element, GLV device, and laser display
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United States of America Patent
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Mar 21, 2006
Grant Date -
Jan 8, 2004
app pub date -
Jul 8, 2002
filing date -
Jul 6, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A MEMS element is constituted as a light modulation element for constituting a GLV device, and it has the same constitution as a conventional MEMS element except for differing in the structure of a bridge member of a membrane. The membrane comprises SiN film of, for example, 100 nm in thickness laminated thereon, and a combined light reflective film and membrane-side electrode composed of an Al film of 100 nm in thickness provided on the bridge member. The SiO2 film may be a SiO2 film formed by thermal oxidation of a sacrificing layer formed of polysilicon or may be a SiO2 film formed by a CVD method or a PVD method.
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