Importance

Loading Importance Indicators...

Abstract

A non-volatile semiconductor memory device including a memory cell array with electrically rewritable and non-volatile memory cells arranged therein, and a sense amplifier circuit for reading said memory cell array, wherein the sense amplifier circuit includes: a first transistor disposed between a bit line of the memory cell array and a sense node to serve for sensing bit line data, the first transistor being driven by a voltage generating circuit including a boost circuit to transfer a bit line voltage determined in response to data of a selected memory cell to the sense node; a second transistor coupled to the sense node for precharging the sense node prior to bit line data sensing; a data latch for judging a transferred bit line voltage level to store a sensed data therein; and a capacitor for boosting the sense node, one end thereof being connected to the sense node, the other end thereof being selectively driven by a boost-use voltage.

Loading the Abstract Image...

First Claim