Nitrogen passivation of interface states in SiO2/SiC structures
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United States of America Patent
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Apr 4, 2006
Grant Date -
May 27, 2004
app pub date -
Aug 14, 2003
filing date -
Aug 30, 2002
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Abstract
A nitrided oxide layer on a silicon carbide layer is processed by annealing the nitrided oxide layer in a substantially oxygen-free nitrogen containing ambient. The anneal may be carried out at a temperature of greater than about 900° C., for example, a temperature of about 1100° C., a temperature of about 1200° C. or a temperature of about 1300° C. Annealing the nitrided oxide layer may be carried out at a pressure of less than about 1 atmosphere, for example, at a pressure of from about 0.01 to about 1 atm or, in particular, at a pressure of about 0.2 atm. The nitrided oxide layer may be an oxide layer that is grown in a N2O and/or NO containing ambient, that is annealed in a N2O and/or NO containing ambient or that is grown and annealed in a N2O and/or NO containing ambient.
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Patent Owner(s)
- CREE, INC.
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Das, Mrinal Kanti | Durham, NC | 16 | 545 |
Saxler, Adam William | Durham, NC | 58 | 3083 |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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