Method for filling via with metal
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United States of America Patent
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Apr 4, 2006
Grant Date -
Sep 16, 2004
app pub date -
Mar 14, 2003
filing date -
Mar 14, 2003
priority date (Note) -
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status (Latency Note)
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Abstract
A method of filling vias for a PCRAM cell with a metal is described. A PCRAM intermediate structure including a substrate, a first conductor, and an insulator through which a via extends has a metallic material formed within the via and on a surface of the insulator. The metallic material may be deposited on the surface and within the via. A hard mask of a flowable oxide is deposited over the metallic material in the via to protect the metallic material in the via. A subsequent dry sputter etch removes the metallic material from the surface of the insulator and a portion of the hard mask. After complete removal of the hard mask, a glass material is recessed over the metallic material in the via. Then, a layer of a metal-containing material is formed over the glass material. Finally, a second conductor is formed on the surface of the insulator.
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