Methods for programming read-only memory cells and associated memories
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United States of America Patent
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Apr 4, 2006
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app pub date -
Jan 4, 1999
filing date -
Jul 31, 1995
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Abstract
A method for programming a read-only memory cell including a transistor whose source and drain, which have a second type of doping, are formed in a semiconductor substrate with a first type of doping, includes a step of carrying out a contradoping in a region of the source, the region being adjacent to the conduction channel 4, to make it a region with the first type of doping so as to prevent a transistor effect from occurring.
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