Dynamic burn-in equipment
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United States of America Patent
Stats
-
Apr 4, 2006
Grant Date -
Nov 25, 2004
app pub date -
Jun 18, 2004
filing date -
Dec 19, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An infrared sensor is provided in a burn-in chamber. The surface temperatures of two or more semiconductor devices are measured by the sensor. A control unit calculates the internal temperatures of the semiconductor devices based on the thermal resistance values of the semiconductor device packages and controls the temperature inside the burn-in chamber so that the average of the internal temperatures is brought to a desired temperature by using a temperature controller. Further, an acceleration coefficient is obtained based on the internal temperatures, a burn-in time is determined based on the acceleration coefficient and a preliminarily given accelerated period, and a burn-in acceleration test is conducted. Moreover, when a defective semiconductor is found, the defective portion of the defective semiconductor device is specified based on the surface temperature distribution of the semiconductor device measured by the infrared sensor.
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