Work function controlled probe for measuring properties of a semiconductor wafer and method of use thereof
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United States of America Patent
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Apr 4, 2006
Grant Date -
Nov 17, 2005
app pub date -
May 14, 2004
filing date -
May 14, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a method of measuring at least one electrical property of a semiconductor wafer, an elastically deformable conductive contact formed from an electrically conductive coating overlaying an electrically conductive base material is provided. The base material has a first work function and the coating has a second work function. A first electrical contact is formed between the conductive contact and a top surface of a semiconductor wafer. A second electrical contact is formed with the semiconductor wafer. An electrical stimulus is applied between the first and second electrical contacts and a response of the semiconductor wafer to the electrical stimulus is measured. At least one electrical property of the semiconductor wafer is determined from the response.
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