Methods of fabricating image sensors including local interconnections
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United States of America Patent
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Apr 11, 2006
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app pub date -
Mar 31, 2005
filing date -
Jun 17, 2002
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Abstract
A pixel of a semiconductor-based image detector includes a photodetector, at least one switching device serially connected to the photodetector and a bypass device interposed between the photodetector and a power supply voltage. Accordingly, even though excess charges may be generated in the photodetector, the excess charges flow into the power supply through the bypass device. Blooming can thereby be reduced or suppressed.
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