Selective filtering of wavelength-converted semiconductor light emitting devices
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United States of America Patent
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Apr 11, 2006
Issued Date -
N/A
app pub date -
May 26, 2004
filing date -
Sep 27, 2002
priority date (Note) -
Expired
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Abstract
A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.
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