Semiconductor device for reducing plasma charging damage
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United States of America Patent
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Apr 11, 2006
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N/A
app pub date -
Jun 14, 2004
filing date -
May 1, 2000
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Abstract
A semiconductor device and method of manufacturing the semiconductor device including a semiconductor substrate of a first conductivity type. A scribe lane area formed in the substrate to define chip formation areas. A deep well area formed in each chip formation area. The deep well area has a second conductivity type which is opposite the first conductivity type. Also, at least one well area is formed within the deep well area.
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