Method and apparatus for determining the dielectric constant of a low permittivity dielectric on a semiconductor wafer
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United States of America Patent
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Apr 11, 2006
Grant Date -
Jul 7, 2005
app pub date -
Dec 30, 2003
filing date -
Dec 30, 2003
priority date (Note) -
Expired
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Abstract
In an apparatus and method for determining a permittivity of a dielectric layer on a semiconductor wafer, a thickness of the dielectric layer is determined and a topside of the wafer is moved into contact with a spherical portion of an at least partially spherical and electrically conductive surface. An electrical stimulus is applied between the electrically conductive surface and the semiconducting material. A capacitance of a capacitor comprised of the electrically conductive surface, the semiconductor material and the dielectric layer is determined from the applied stimulus. A permittivity of the dielectric layer is then determined as a function of the capacitance and the thickness of the dielectric layer.
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