Substrate independent distributed bragg reflector and formation method
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United States of America Patent
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Apr 11, 2006
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N/A
app pub date -
Jun 16, 2003
filing date -
Aug 9, 2000
priority date (Note) -
Expired
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Abstract
Distributed Bragg reflectors may be formed in fewer layers by the method, which is capable of producing greater differences in indexes of refraction. Group III-V alternating layers are deposited. The microstructure of alternating layers is controlled to be different. A combination of alternating polycrystalline layers or amorphous and polycrystalline layers results. Alternate ones of the layers oxidize more quickly than the others. A lateral wet oxidation of the alternate ones of the layers produces a structure with large differences in indexes of refraction between adjacent layers. The microstructure between alternating layers may be controlled by controlling Group V overpressure alone or in combination with growth temperature.
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