Semiconductor device and method of manufacturing the same
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United States of America Patent
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Apr 18, 2006
Grant Date -
Apr 15, 2004
app pub date -
Dec 5, 2002
filing date -
Oct 14, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention relates to a semiconductor device and a method of manufacturing the same. The minimum marginal width of an impurity diffusion layer is defined to reduce by a given width. The reduced width of the impurity diffusion layer is compensated for through a silicon growth layer formed on the top of a device isolation film having a relatively higher degree of freedom than the bottom of the device isolation film. Thus, the degree of integration in the semiconductor device can be improved while keeping intact the minimum marginal width of the impurity diffusion layer.
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