Minimally-patterned semiconductor devices for display applications
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United States of America Patent
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Apr 18, 2006
Grant Date -
N/A
app pub date -
May 5, 2000
filing date -
May 5, 1999
priority date (Note) -
Expired
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Abstract
A thin-film transistor array comprises at least first and second transistors. Each transistor comprises a source electrode, a drain electrode a semiconductor electrode, a gate electrode, and a semiconductor layer. The semiconductor layer is continuous between the first and second transistors. The semiconductor layer is preferably unpatterned. In various display applications, the geometry of the transistors is selected to provide acceptable leakage currents. In a preferred embodiment, the transistor array is employed in an encapsulated electrophoretic display.
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