Photovoltaic device with intrinsic amorphous film at junction, having varied optical band gap through thickness thereof
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United States of America Patent
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Apr 18, 2006
Grant Date -
Jun 13, 2002
app pub date -
Sep 5, 2001
filing date -
Sep 5, 2000
priority date (Note) -
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Abstract
In a photovoltaic device comprising a thin intrinsic amorphous semiconductor film inserted in a junction portion of a crystalline semiconductor substrate and an amorphous semiconductor film which have conductive types reverse to each other, an optical band gap of the intrinsic amorphous semiconductor film is expanded on a side in contact with the amorphous semiconductor film.
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