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Abstract

A memory device (10) includes an array (12) of memory cells arranged in rows and columns. Preferably, each memory cell includes a pass transistor coupled to a storage capacitor. A row decoder is coupled to rows of memory cells while a column decoder (14) is coupled to columns of the memory cells. The column decoder (14) includes an enable input. A variable delay (32) has an output coupled to the enable input of the column decoder (14). The variable delay (32) receives an indication (R/W′) of whether a current cycle is a read cycle or a write cycle. In the preferred embodiment, a signal provided at the output of the variable delay (32) is delayed if the current cycle is a read cycle compared to if the current cycle is a write cycle.

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