Method and apparatus for determining generation lifetime of product semiconductor wafers
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United States of America Patent
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May 2, 2006
Grant Date -
Dec 29, 2005
app pub date -
Jun 23, 2004
filing date -
Jun 23, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
To determine the generation lifetime of a pn junction of a semiconductor wafer, an elastically deformable, electrically conductive contact is caused to touch a surface of the semiconductor wafer over the pn junction. At least one reverse bias voltage is applied to the pn junction via the contact and a value of current flowing in the contact in response to the application of each reverse bias voltage is measured. The generation lifetime of the pn junction is then determined from a subset of the values of the reverse bias voltage and the corresponding values of measured current.
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