Thin film transistor and multilayer film structure and manufacturing method of same
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United States of America Patent
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May 2, 2006
Issued Date -
N/A
app pub date -
Jul 14, 2004
filing date -
Jun 27, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The present invention is directed to a thin film transistor (and related multilayer structures) that includes: source and drain electrodes 14 and 15 disposed at a specified interval above an insulating substrate 11 and formed by printing-and-plating; an a-Si film 16 disposed for the source and drain electrodes 14 and 15; a gate insulating film 17 laminated on the a-Si film 16; and a gate electrode 18 laminated on the gate insulating film 17 and formed by printing-and-plating. The a-Si film 16 and the gate insulating film 17 have an offset region 20 that uniformly extends beyond the dimensions of the gate electrode 18.
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