Semiconductor device having a non-single crystalline semiconductor layer
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United States of America Patent
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May 2, 2006
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N/A
app pub date -
Apr 18, 1996
filing date -
May 7, 1985
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Expired
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Abstract
A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconductor layer member having at least one intrinsic, non-single-crystal semiconductor layer, and a second conductive layer disposed on the non-single-crystal semiconductor layer. The intrinsic non-single-crystal semiconductor layer contains sodium and oxygen in very low concentrations where each concentration is 5.times.10.sup.18 atoms/cm.sup.3 or less.
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