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Abstract

Methods and apparatus of forming titanium tantalum silicon nitride (Ti.sub.xTa.sub.y(Si)N.sub.z) layers are described. The titanium tantalum silicon nitride (Ti.sub.xTa.sub.y(Si)N.sub.z) layer may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor, a tantalum-containing precursor, a nitrogen-containing gas and a silicon-containing gas on a substrate. The titanium-containing precursor, the tantalum-containing precursor, the silicon-containing precursor and the nitrogen-containing precursor react to form the titanium tantalum silicon nitride (Ti.sub.xTa.sub.y(Si)N.sub.z) layer on the substrate. The formation of the titanium tantalum silicon nitride (Ti.sub.xTa.sub.y(Si)N.sub.z) layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the titanium tantalum silicon nitride (Ti.sub.xTa.sub.y(Si)N.sub.z) layer is used as a diffusion barrier for a copper metallization process.

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