Phase change memory devices including memory elements having variable cross-sectional areas
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 9, 2006
Grant Date -
Aug 4, 2005
app pub date -
Dec 20, 2004
filing date -
Jan 29, 2004
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A phase-change memory device may include first and second spaced apart conductive electrodes, and a phase-change memory element coupled between the first and second conductive electrodes. More particularly, a first portion of the phase-change memory element may have a first cross-sectional area along a current path between the first and second conductive electrodes, and a second portion of the phase-change memory element may have a second cross-sectional area along the current path between the first and second conductive electrodes. Moreover, the first and second cross-sectional areas may be different.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully