Low power consumption MIS semiconductor device
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United States of America Patent
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May 9, 2006
Grant Date -
Apr 29, 2004
app pub date -
Apr 9, 2003
filing date -
Oct 25, 2002
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized.
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