Method of programming a flash memory device using multilevel charge storage
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United States of America Patent
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May 9, 2006
Grant Date -
N/A
app pub date -
Jul 22, 2004
filing date -
Jul 22, 2004
priority date (Note) -
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Abstract
Disclosed is a method of programming a flash memory device to store an amount of charge corresponding to one of a plurality of charged program states. The method can include pulsing the memory device with program voltages including at least a gate voltage. If the gate voltage is greater than or equal to a predetermined minimum threshold voltage for the one of the plurality of charged program states, an amount of charge stored by the memory device can be verified. Otherwise the memory device can be repulsed. This procedure can be carried out until verifying is conducted and the verifying indicates that the amount of charge stored by the memory device corresponds to the one of the plurality of charged program states.
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