Apparatuses and method for maskless mesoscale material deposition
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United States of America Patent
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May 16, 2006
Grant Date -
Dec 11, 2003
app pub date -
Jan 17, 2003
filing date -
Sep 30, 1998
priority date (Note) -
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Abstract
Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100.degree. C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance--the orifice to substrate distance may be several millimeters--and direct write onto non-planar surfaces is possible.
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