Film forming material, film forming method, and silicide film
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United States of America Patent
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May 16, 2006
Grant Date -
Mar 17, 2005
app pub date -
Jul 22, 2004
filing date -
Sep 17, 2003
priority date (Note) -
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Abstract
A technique is provided of forming silicide films usable for next-generation transistors through a CVD process. In the technique of forming a silicide film formed of Ni and Si, where one or more chemical compounds represented with the following general formula [I] are used as an Ni source: ##STR00001## where R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, R.sub.7, R.sub.8, R.sub.9, or R.sub.10 is H or a hydrocarbon group.
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