Memory sensing circuit and method for low voltage operation

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7046568
APP PUB NO 20050169082A1
SERIAL NO

11015199

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A sensing module operates with a sense amplifier sensing a conduction current of a memory cell via a coupled bit line under constant voltage condition in order to minimize bit-line to bit-line coupling. The rate of discharge of a dedicated capacitor as measured by a change in the voltage drop there across in a predetermined period is used to indicate the magnitude of the conduction current. The voltage cannot drop below a minimum level imposed by a circuit for maintaining the constant voltage condition on the bit line. A voltage shifter is used to boost the voltage during the discharge and to unboost the voltage after the discharge, so that the change in voltage drop properly reflects the rate of discharge without running into the minimum level.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
SANDISK TECHNOLOGIES LLCPLANO, TX4048

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cernea, Raul-Adrian Santa Clara, CA 128 5645

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SHARP KABUSHIKI KAISHA (1)
6744667 BIT LINE CONTROL DECODER CIRCUIT, VIRTUAL GROUND TYPE NONVOLATILE SEMICONDUCTOR STORAGE DEVICE PROVIDED WITH THE DECODER CIRCUIT, AND DATA READ METHOD OF VIRTUAL GROUND TYPE NONVOLATILE SEMICONDUCTOR STORAGE DEVICE 54 2002
 
CYPRESS SEMICONDUCTOR CORPORATION (1)
4785427 Differential bit line clamp 72 1987
 
SONY CORPORATION (1)
5920502 Nonvolatile semiconductor memory with fast data programming and erasing function using ECC 63 1997
 
SAMSUNG ELECTRONICS CO., LTD. (2)
6490199 Sense amplifier circuit for a flash memory device 78 2001
6731539 Memory with offset bank select cells at opposite ends of buried diffusion lines 44 2003
 
FUJITSU LIMITED (1)
5537356 Nonvolatile semiconductor memory 49 1995
 
SANDISK TECHNOLOGIES LLC (9)
5095344 Highly compact EPROM and flash EEPROM devices 785 1988
5070032 Method of making dense flash EEprom semiconductor memory structures 566 1989
5172338 Multi-state EEprom read and write circuits and techniques 1149 1990
5343063 Dense vertical programmable read only memory cell structure and processes for making them 520 1990
5315541 Segmented column memory array 775 1992
5661053 Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers 497 1994
5595924 Technique of forming over an irregular surface a polysilicon layer with a smooth surface 274 1994
6222762 Multi-state memory 950 1997
6407953 Memory array organization and related test method particularly well suited for integrated circuits having write-once memory arrays 160 2001
 
VALLEY DEVICE MANAGEMENT (1)
6504757 Double boosting scheme for NAND to improve program inhibit characteristics 63 2001
 
SGS-ATES Componenti Elettronici S.p.A. (1)
4357685 Method of programming an electrically alterable nonvolatile memory 219 1980
 
TEXAS INSTRUMENTS INCORPORATED (1)
5093806 Sensing and decoding scheme for a BiCMOS read/write memory 73 1989
 
KABUSHIKI KAISHA TOSHIBA (10)
5418752 Flash EEPROM system with erase sector select 427 1992
5570315 Multi-state EEPROM having write-verify control circuit 914 1994
* 5650970 semiconductor memory device having a flash write function 32 1995
5774397 Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state 580 1996
5903495 Semiconductor device and memory system 423 1997
6097638 Semiconductor memory device 94 1998
6011287 Non-volatile semiconductor memory device 120 1998
6046935 Semiconductor device and memory system 886 1999
6046940 Nonvolatile semiconductor memory device 83 1999
6373746 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells 248 2000
 
SAIFUN SEMICONDUCTORS LTD. (2)
5768192 Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping 955 1996
6011725 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping 1174 1999
 
STMICROELECTRONICS, INC. (1)
5949720 Voltage clamping method and apparatus for dynamic random access memory devices 48 1998
 
NEC ELECTRONICS CORPORATION (1)
5245571 Sense amplifier circuit implemented by bipolar transistor and improved in current consumption 49 1991
 
Radiant Technologies, Inc. (1)
5872739 Sense amplifier for low read-voltage memory cells 59 1997
 
Datalight, Incorporated (1)
5860082 Method and apparatus for allocating storage in a flash memory 108 1996
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (1)
* 2007/0277,528 PREMIXING INJECTOR FOR GAS TURBINE ENGINES 2 2007
 
SANDISK TECHNOLOGIES LLC (238)
7443757 Non-volatile memory and method with reduced bit line crosstalk errors 9 2002
* 2004/0057,318 Non-volatile memory and method with reduced bit line crosstalk errors 11 2002
7251160 Non-volatile memory and method with power-saving read and program-verify operations 41 2005
* 2006/0209,592 Non-volatile memory and method with power-saving read and program-verify operations 14 2005
7366022 Apparatus for programming of multi-state non-volatile memory using smart verify 16 2005
7301817 Method for programming of multi-state non-volatile memory using smart verify 104 2005
* 2007/0097,747 Apparatus for programming of multi-state non-volatile memory using smart verify 3 2005
* 2007/0097,749 Method for programming of multi-state non-volatile memory using smart verify 5 2005
7355888 Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages 15 2005
7355889 Method for programming non-volatile memory with reduced program disturb using modified pass voltages 32 2005
* 2007/0171,719 Method for programming non-volatile memory with reduced program disturb using modified pass voltages 22 2005
* 2007/0171,718 Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages 0 2005
7327619 Reference sense amplifier for non-volatile memory 9 2005
7324393 Method for compensated sensing in non-volatile memory 43 2005
* 2006/0158,947 Reference sense amplifier for non-volatile memory 10 2005
* 2006/0158,935 Method for compensated sensing in non-volatile memory 6 2005
7310255 Non-volatile memory with improved program-verify operations 91 2005
* 2007/0171,725 Non-volatile memory with improved program-verify operations 1 2005
* 7224614 Methods for improved program-verify operations in non-volatile memories 40 2005
7619922 Method for non-volatile memory with background data latch caching during erase operations 53 2006
7609552 Non-volatile memory with background data latch caching during erase operations 1 2006
7505320 Non-volatile memory with background data latch caching during program operations 22 2006
7502260 Method for non-volatile memory with background data latch caching during program operations 23 2006
7486558 Non-volatile memory with managed execution of cached data 6 2006
7480181 Non-volatile memory with background data latch caching during read operations 13 2006
7463521 Method for non-volatile memory with managed execution of cached data 41 2006
7447078 Method for non-volatile memory with background data latch caching during read operations 24 2006
* 2006/0233,022 Non-Volatile Memory with Background Data Latch Caching During Program Operations 21 2006
* 2006/0233,021 Non-Volatile Memory with Background Data Latch Caching During Erase Operations 19 2006
* 2006/0233,023 Method for Non-Volatile Memory with Background Data Latch Caching During Erase Operations 42 2006
* 2006/0233,026 Method for Non-Volatile Memory with Background Data Latch Caching During Program Operations 29 2006
* 2006/0221,696 Method for Non-Volatile Memory with Background Data Latch Caching During Read Operations 13 2006
7376030 Memory sensing circuit and method for low voltage operation 13 2006
* 2006/0203,545 Memory Sensing Circuit and Method for Low Voltage Operation 0 2006
7391650 Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates 19 2006
7342831 System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates 95 2006
* 2007/0291,566 METHOD FOR OPERATING NON-VOLATILE MEMORY USING TEMPERATURE COMPENSATION OF VOLTAGES OF UNSELECTED WORD LINES AND SELECT GATES 8 2006
* 2007/0291,567 SYSTEM FOR OPERATING NON-VOLATILE MEMORY USING TEMPERATURE COMPENSATION OF VOLTAGES OF UNSELECTED WORD LINES AND SELECT GATES 3 2006
7492633 System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines 4 2006
7349261 Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines 8 2006
* 2007/0291,543 METHOD FOR INCREASING PROGRAMMING SPEED FOR NON-VOLATILE MEMORY BY APPLYING COUNTER-TRANSITIONING WAVEFORMS TO WORD LINES 3 2006
* 2007/0291,545 SYSTEM FOR INCREASING PROGRAMMING SPEED FOR NON-VOLATILE MEMORY BY APPLYING COUNTER-TRANSITIONING WAVEFORMS TO WORD LINES 4 2006
7489549 System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages 25 2006
7486561 Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages 18 2006
* 2007/0297,245 SYSTEM FOR NON-REAL TIME REPROGRAMMING OF NON-VOLATILE MEMORY TO ACHIEVE TIGHTER DISTRIBUTION OF THRESHOLD VOLTAGES 10 2006
* 2007/0297,226 METHOD FOR NON-REAL TIME REPROGRAMMING OF NON-VOLATILE MEMORY TO ACHIEVE TIGHTER DISTRIBUTION OF THRESHOLD VOLTAGES 53 2006
* 2007/0297,247 METHOD FOR PROGRAMMING NON-VOLATILE MEMORY USING VARIABLE AMPLITUDE PROGRAMMING PULSES 14 2006
7957185 Non-volatile memory and method with power-saving read and program-verify operations 4 2006
7570513 Non-volatile memory and method with power-saving read and program-verify operations 9 2006
* 2007/0014,161 Non-Volatile Memory and Method With Power-Saving Read and Program-Verify Operations 13 2006
* 2007/0014,156 Non-Volatile Memory and Method With Power-Saving Read and Program-Verify Operations 4 2006
7977186 Providing local boosting control implant for non-volatile memory 1 2006
7705387 Non-volatile memory with local boosting control implant 3 2006
* 2008/0081,419 PROVIDING LOCAL BOOSTING CONTROL IMPLANT FOR NON-VOLATILE MEMORY 4 2006
* 2008/0079,052 NON-VOLATILE MEMORY WITH LOCAL BOOSTING CONTROL IMPLANT 3 2006
7691710 Fabricating non-volatile memory with dual voltage select gate structure 7 2006
7616490 Programming non-volatile memory with dual voltage select gate structure 10 2006
7586157 Non-volatile memory with dual voltage select gate structure 4 2006
* 2008/0089,128 PROGRAMMING NON-VOLATILE MEMORY WITH DUAL VOLTAGE SELECT GATE STRUCTURE 1 2006
* 2008/0090,351 FABRICATING NON-VOLATILE MEMORY WITH DUAL VOLTAGE SELECT GATE STRUCTURE 3 2006
* 2008/0089,127 NON-VOLATILE MEMORY WITH DUAL VOLTAGE SELECT GATE STRUCTURE 25 2006
7468911 Non-volatile memory using multiple boosting modes for reduced program disturb 83 2006
7440323 Reducing program disturb in non-volatile memory using multiple boosting modes 16 2006
* 2008/0123,426 NON-VOLATILE MEMORY USING MULTIPLE BOOSTING MODES FOR REDUCED PROGRAM DISTURB 32 2006
* 2008/0123,425 REDUCING PROGRAM DISTURB IN NON-VOLATILE MEMORY USING MULTIPLE BOOSTING MODES 6 2006
7696035 Method for fabricating non-volatile memory with boost structures 3 2006
7508710 Operating non-volatile memory with boost structures 78 2006
7508703 Non-volatile memory with boost structures 3 2006
* 2008/0112,226 NON-VOLATILE MEMORY WITH BOOST STRUCTURES 44 2006
* 2008/0113,479 FABRICATING NON-VOLATILE MEMORY WITH BOOST STRUCTURES 7 2006
* 2008/0112,230 OPERATING NON-VOLATILE MEMORY WITH BOOST STRUCTURES 1 2006
7508721 Use of data latches in multi-phase programming of non-volatile memories 28 2006
* 2007/0097,744 Use of Data Latches in Multi-Phase Programming of Non-Volatile Memories 5 2006
7623386 Reducing program disturb in non-volatile storage using early source-side boosting 9 2006
7623387 Non-volatile storage with early source-side boosting for reducing program disturb 7 2006
* 2008/0137,426 NON-VOLATILE STORAGE WITH EARLY SOURCE-SIDE BOOSTING FOR REDUCING PROGRAM DISTURB 2 2006
* 2008/0137,425 REDUCING PROGRAM DISTURB IN NON-VOLATILE STORAGE USING EARLY SOURCE-SIDE BOOSTING 0 2006
7583535 Biasing non-volatile storage to compensate for temperature variations 28 2006
7583539 Non-volatile storage with bias for temperature compensation 9 2006
7554853 Non-volatile storage with bias based on selective word line 5 2006
7525843 Non-volatile storage with adaptive body bias 7 2006
7468919 Biasing non-volatile storage based on selected word line 26 2006
7468920 Applying adaptive body bias to non-volatile storage 11 2006
* 2008/0158,976 BIASING NON-VOLATILE STORAGE BASED ON SELECTED WORD LINE 5 2006
* 2008/0158,970 BIASING NON-VOLATILE STORAGE TO COMPENSATE FOR TEMPERATURE VARIATIONS 10 2006
* 2008/0158,992 NON-VOLATILE STORAGE WITH ADAPTIVE BODY BIAS 4 2006
* 2008/0158,975 NON-VOLATILE STORAGE WITH BIAS FOR TEMPERATURE COMPENSATION 14 2006
* 2008/0158,960 APPLYING ADAPTIVE BODY BIAS TO NON-VOLATILE STORAGE 2 2006
* 2008/0159,007 NON-VOLATILE STORAGE WITH BIAS BASED ON SELECTED WORD LINE 32 2006
7577037 Use of data latches in cache operations of non-volatile memories 6 2007
* 2007/0109,867 Use of Data Latches in Cache Operations of Non-Volatile Memories 19 2007
7551484 Non-volatile memory and method with reduced source line bias errors 0 2007
* 2007/0109,889 Non-Volatile Memory and Method With Reduced Source Line Bias Errors 1 2007
7428171 Non-volatile memory and method with improved sensing 0 2007
* 2007/0109,847 Non-Volatile Memory and Method With Improved Sensing 2 2007
7391645 Non-volatile memory and method with compensation for source line bias errors 5 2007
7391646 Non-volatile memory and method with control gate compensation for source line bias errors 5 2007
* 2007/0115,722 Non-Volatile Memory and Method With Control Gate Compensation for Source Line Bias Errors 0 2007
* 2007/0115,721 Non-Volatile Memory and Method With Compensation for Source Line Bias Errors 0 2007
7295473 System for reducing read disturb for non-volatile storage 16 2007
* 2007/0153,573 SYSTEM FOR REDUCING READ DISTURB FOR NON-VOLATILE STORAGE 1 2007
7904793 Method for decoding data in non-volatile storage using reliability metrics based on multiple reads 44 2007
7797480 Method for reading non-volatile storage using pre-conditioning waveforms and modified reliability metrics 4 2007
* 2008/0250,300 METHOD FOR DECODING DATA IN NON-VOLATILE STORAGE USING RELIABILITY METRICS BASED ON MULTIPLE READS 57 2007
* 2008/0244,162 METHOD FOR READING NON-VOLATILE STORAGE USING PRE-CONDITIONING WAVEFORMS AND MODIFIED RELIABILITY METRICS 12 2007
7606071 Compensating source voltage drop in non-volatile storage 7 2007
7606072 Non-volatile storage with compensation for source voltage drop 2 2007
* 2008/0266,963 COMPENSATING SOURCE VOLTAGE DROP IN NON-VOLATILE STORAGE 0 2007
* 2008/0266,964 NON-VOLATILE STORAGE WITH COMPENSATION FOR SOURCE VOLTAGE DROP 1 2007
7606079 Reducing power consumption during read operations in non-volatile storage 7 2007
* 2008/0266,975 NON-VOLATILE STORAGE WITH REDUCED POWER CONSUMPTION DURING READ OPERATIONS 4 2007
* 2008/0266,973 REDUCING POWER CONSUMPTION DURING READ OPERATIONS IN NON-VOLATILE STORAGE 27 2007
7440327 Non-volatile storage with reduced power consumption during read operations 7 2007
7463522 Non-volatile storage with boosting using channel isolation switching 1 2007
7460404 Boosting for non-volatile storage using channel isolation switching 6 2007
* 2008/0279,008 NON-VOLATILE STORAGE WITH BOOSTING USING CHANNEL ISOLATION SWITCHING 3 2007
* 2008/0279,007 BOOSTING FOR NON-VOLATILE STORAGE USING CHANNEL ISOLATION SWITCHING 1 2007
7447081 Methods for improved program-verify operations in non-volatile memories 24 2007
* 2007/0230,250 Methods for Improved Program-Verify Operations in Non-Volatile Memories 1 2007
7545678 Non-volatile storage with source bias all bit line sensing 10 2007
7539060 Non-volatile storage using current sensing with biasing of source and P-Well 1 2007
7532516 Non-volatile storage with current sensing of negative threshold voltages 3 2007
7489554 Method for current sensing with biasing of source and P-well in non-volatile storage 3 2007
* 2009/0003,068 METHOD FOR SOURCE BIAS ALL BIT LINE SENSING IN NON-VOLATILE STORAGE 2 2007
* 2009/0003,069 NON-VOLATILE STORAGE WITH SOURCE BIAS ALL BIT LINE SENSING 12 2007
7471567 Method for source bias all bit line sensing in non-volatile storage 16 2007
7447079 Method for sensing negative threshold voltages in non-volatile storage using current sensing 27 2007
* 2008/0247,239 METHOD FOR CURRENT SENSING WITH BIASING OF SOURCE AND P-WELL IN NON-VOLATILE STORAGE 0 2007
* 2008/0247,253 NON-VOLATILE STORAGE WITH TEMPERATURE COMPENSATION FOR BIT LINE DURING SENSE OPERATIONS 24 2007
* 2008/0247,238 METHOD FOR SENSING NEGATIVE THRESHOLD VOLTAGES IN NON-VOLATILE STORAGE USING CURRENT SENSING 1 2007
* 2008/0247,228 NON-VOLATILE STORAGE WITH CURRENT SENSING OF NEGATIVE THRESHOLD VOLTAGES 10 2007
* 2008/0247,229 NON-VOLATILE STORAGE USING CURRENT SENSING WITH BIASING OF SOURCE AND P-Well 0 2007
* 2008/0247,254 METHOD FOR TEMPERATURE COMPENSATING BIT LINE DURING SENSE OPERATIONS IN NON-VOLATILE STORAGE 13 2007
* 2007/0279,992 Non-Volatile Memory And Method With Reduced Neighboring Field Errors 5 2007
7894269 Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells 7 2007
7652929 Non-volatile memory and method for biasing adjacent word line for verify during programming 19 2007
* 2009/0073,771 Non-Volatile Memory and Method for Biasing Adjacent Word Line for Verify During Programming 16 2007
* 2008/0019,188 Nonvolatile Memory and Method for Compensating During Programming for Perturbing Charges of Neighboring Cells 29 2007
7577034 Reducing programming voltage differential nonlinearity in non-volatile storage 8 2007
* 2009/0080,263 REDUCING PROGRAMMING VOLTAGE DIFFERENTIAL NONLINEARITY IN NON-VOLATILE STORAGE 11 2007
7492634 Method for programming of multi-state non-volatile memory using smart verify 13 2007
7688638 Faster programming of multi-level non-volatile storage through reduced verify operations 9 2007
* 2009/0147,573 FASTER PROGRAMMING OF MULTI-LEVEL NON-VOLATILE STORAGE THROUGH REDUCED VERIFY OPERATIONS 21 2007
7609556 Non-volatile memory with improved program-verify operations 4 2007
* 2008/0094,911 Non-Volatile Memory With Improved Program-Verify Operations 3 2007
7463528 Temperature compensation of select gates in non-volatile memory 27 2007
7460407 Temperature compensation of voltages of unselected word lines in non-volatile memory based on word line position 10 2007
* 2008/0094,908 TEMPERATURE COMPENSATION OF VOLTAGES OF UNSELECTED WORD LINES IN NON-VOLATILE MEMORY BASED ON WORD LINE POSITION 6 2007
* 2008/0094,930 TEMPERATURE COMPENSATION OF SELECT GATES IN NON-VOLATILE MEMORY 4 2007
7764547 Regulation of source potential to combat cell source IR drop 9 2007
7701761 Read, verify word line reference voltage to track source level 8 2007
* 2009/0161,434 Read, Verify Word Line Reference Voltage to Track Source Level 1 2007
* 7593265 Low noise sense amplifier array and method for nonvolatile memory 15 2007
* 2009/0168,540 Low Noise Sense Amplifier Array and Method for Nonvolatile Memory 13 2007
7468921 Method for increasing programming speed for non-volatile memory by applying direct-transitioning waveforms to word lines 0 2008
* 2008/0130,370 METHOD FOR INCREASING PROGRAMMING SPEED FOR NON-VOLATILE MEMORY BY APPLYING DIRECT-TRANSITIONING WAVEFORMS TO WORD LINES 2 2008
7593277 Method for compensated sensing in non-volatile memory 1 2008
* 2008/0117,701 Method For Compensated Sensing In Non-Volatile Memory 4 2008
7495956 Reducing read disturb for non-volatile storage 19 2008
7447065 Reducing read disturb for non-volatile storage 12 2008
7440318 Reducing read disturb for non-volatile storage 19 2008
* 2008/0137,411 REDUCING READ DISTURB FOR NON-VOLATILE STORAGE 1 2008
* 2008/0137,423 REDUCING READ DISTURB FOR NON-VOLATILE STORAGE 0 2008
* 2008/0137,424 REDUCING READ DISTURB FOR NON-VOLATILE STORAGE 0 2008
7577026 Source and drain side early boosting using local self boosting for non-volatile storage 2 2008
* 2008/0278,999 SOURCE AND DRAIN SIDE EARLY BOOSTING USING LOCAL SELF BOOSTING FOR NON-VOLATILE STORAGE 0 2008
7606076 Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise 12 2008
* 2008/0247,241 SENSING IN NON-VOLATILE STORAGE USING PULLDOWN TO REGULATED SOURCE VOLTAGE TO REMOVE SYSTEM NOISE 9 2008
7915664 Non-volatile memory with sidewall channels and raised source/drain regions 0 2008
* 2009/0261,398 NON-VOLATILE MEMORY WITH SIDEWALL CHANNELS AND RAISED SOURCE/DRAIN REGIONS 7 2008
8051240 Compensating non-volatile storage using different pass voltages during program-verify and read 7 2008
* 2009/0282,184 COMPENSATING NON-VOLATILE STORAGE USING DIFFERENT PASS VOLTAGES DURING PROGRAM-VERIFY AND READ 6 2008
7719902 Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage 6 2008
* 2009/0290,429 ENHANCED BIT-LINE PRE-CHARGE SCHEME FOR INCREASING CHANNEL BOOSTING IN NON-VOLATILE STORAGE 9 2008
7957197 Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node 10 2008
* 2009/0296,488 High Speed Sense Amplifier Array and Method for Nonvolatile Memory 23 2008
7499324 Non-volatile memory and method with control gate compensation for source line bias errors 11 2008
* 2008/0253,185 Non-Volatile Memory and Method with Control Gate Compensation for Source Line Bias Errors 0 2008
7800956 Programming algorithm to reduce disturb with minimal extra time penalty 12 2008
* 2009/0323,429 PROGRAMMING ALGORITHM TO REDUCE DISTURB WITH MINIMAL EXTRA TIME PENALTY 9 2008
7796430 Non-volatile memory using multiple boosting modes for reduced program disturb 8 2008
* 2009/0010,065 NON-VOLATILE MEMORY USING MULTIPLE BOOSTING MODES FOR REDUCED PROGRAM DISTURB 1 2008
7733703 Method for non-volatile memory with background data latch caching during read operations 5 2008
* 2009/0067,253 Method for Non-Volatile Memory With Background Data Latch Caching During Read Operations 7 2008
7751244 Applying adaptive body bias to non-volatile storage based on number of programming cycles 3 2008
8130552 Multi-pass programming for memory with reduced data storage requirement 2 2008
* 2010/0061,151 MULTI-PASS PROGRAMMING FOR MEMORY WITH REDUCED DATA STORAGE REQUIREMENT 162 2008
7633802 Non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages 83 2008
* 2009/0103,356 NON-REAL TIME REPROGRAMMING OF NON-VOLATILE MEMORY TO ACHIEVE TIGHTER DISTRIBUTION OF THRESHOLD VOLTAGES 5 2008
7936602 Use of data latches in cache operations of non-volatile memories 3 2009
* 2009/0262,578 Use of Data Latches in Cache Operations of Non-Volatile Memories 7 2009
7852678 Non-volatile memory with improved sensing by reducing source line current 4 2009
7978526 Low noise sense amplifier array and method for nonvolatile memory 11 2009
* 2010/0008,148 Low Noise Sense Amplifier Array and Method for Nonvolatile Memory 11 2009
8284606 Compensating for coupling during programming 7 2009
8179723 Non-volatile memory with boost structures 3 2010
* 2010/0157,678 NON-VOLATILE MEMORY WITH BOOST STRUCTURES 5 2010
8054681 Read, verify word line reference voltage to track source level 0 2010
* 2010/0157,681 Read, Verify Word Line Reference Voltage to Track Source Level 0 2010
8023322 Non-volatile memory and method with reduced neighboring field errors 1 2010
* 2010/0182,831 Non-Volatile Memory And Method With Reduced Neighboring Field Errors 2 2010
8000146 Applying different body bias to different substrate portions for non-volatile storage 1 2010
* 2010/0195,398 APPLYING DIFFERENT BODY BIAS TO DIFFERENT SUBSTRATE PORTIONS FOR NON-VOLATILE STORAGE 5 2010
8036041 Method for non-volatile memory with background data latch caching during read operations 12 2010
* 2010/0226,176 Method for Non-Volatile Memory With Background Data Latch Caching During Read Operations 2 2010
* 8050126 Non-volatile memory with improved sensing by reducing source line current 0 2010
* 2011/0075,480 Non-Volatile Memory With Improved Sensing By Reducing Source Line Current 2 2010
8472280 Alternate page by page programming scheme 17 2010
8468424 Method for decoding data in non-volatile storage using reliability metrics based on multiple reads 1 2011
* 2011/0131,473 Method For Decoding Data In Non-Volatile Storage Using Reliability Metrics Based On Multiple Reads 20 2011
8400839 Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells 7 2011
* 2011/0141,818 Nonvolatile Memory and Method for Compensating During Programming for Perturbing Charges of Neighboring Cells 2 2011
8169831 High speed sense amplifier array and method for non-volatile memory 2 2011
* 2011/0205,804 High Speed Sense Amplifier Array and Method for Non-Volatile Memory 7 2011
8154923 Non-volatile memory and method with power-saving read and program-verify operations 4 2011
* 2011/0222,345 Non-Volatile Memory and Method With Power-Saving Read and Program-Verify Operations 1 2011
8300472 Low noise sense amplifier array and method for nonvolatile memory 0 2011
8164957 Reducing energy consumption when applying body bias to substrate having sets of nand strings 3 2011
8300457 Non-volatile memory and method with reduced neighboring field errors 0 2011
8351269 Method for non-volatile memory with background data latch caching during read operations 2 2011
8705293 Compact sense amplifier for non-volatile memory suitable for quick pass write 11 2011
8630120 Compact sense amplifier for non-volatile memory 6 2011
8300473 Non-volatile memory with improved sensing by reducing source line current 0 2011
8542529 Non-volatile memory and method with power-saving read and program-verify operations 0 2012
8995211 Program condition dependent bit line charge rate 0 2012
8411507 Compensating for coupling during programming 1 2012
9293195 Compact high speed sense amplifier for non-volatile memory 1 2012
9076545 Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution 2 2013
8971141 Compact high speed sense amplifier for non-volatile memory and hybrid lockout 0 2013
8966350 Providing reliability metrics for decoding data in non-volatile storage 0 2013
9177663 Dynamic regulation of memory array source line 1 2013
9368224 Self-adjusting regulation current for memory array source line 0 2014
9595345 Adaptive selective bit line pre-charge for current savings and fast programming 0 2014
9208895 Cell current control through power supply 1 2014
9349468 Operational amplifier methods for charging of sense amplifier internal nodes 1 2014
9570184 Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution 0 2015
9570185 Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution 0 2015
9558836 Compact high speed sense amplifier for non-volatile memory with reduced layout area and power consumption 0 2015
 
MICRON TECHNOLOGY, INC. (3)
7423476 Current mirror circuit having drain-source voltage clamp 4 2006
* 2008/0074,174 Current mirror circuit having drain-source voltage clamp 1 2006
7705664 Current mirror circuit having drain-source voltage clamp 6 2008
 
PT 259, LLC (1)
8559222 Nonvolatile semiconductor memory 7 2013
 
SAMSUNG ELECTRONICS CO., LTD. (1)
RE46238 Semiconductor memory device and related method of programming 0 2015
 
Legend Design Technology, Inc. (1)
* 2005/0049,845 Verification and characterization of noise margin in integrated circuit designs 0 2003
 
KABUSHIKI KAISHA TOSHIBA (14)
7365018 Fabrication of semiconductor device for flash memory with increased select gate width 6 2005
* 2007/0148,973 Fabrication of semiconductor device for flash memory with increased select gate width 3 2005
7692987 Semiconductor storage device 4 2008
* 2008/0291,743 SEMICONDUCTOR STORAGE DEVICE 9 2008
8009470 Nonvolatile semiconductor memory 11 2009
* 2010/0135,078 NONVOLATILE SEMICONDUCTOR MEMORY 8 2009
8203888 Non-volatile semiconductor storage device 10 2010
8223543 Nonvolatile semiconductor memory 1 2011
8649223 Semiconductor storage device 0 2012
8787087 Semiconductor memory device controlling operation timing of the sense circuit 2 2012
8477534 Nonvolatile semiconductor memory 9 2012
8750039 Nonvolatile semiconductor memory 2 2013
9384848 Nonvolatile semiconductor memory with dual latch sense amplifier 0 2014
9514836 Nonvolatile semiconductor memory and verify read operation 0 2015
 
SANDISK IL LTD. (8)
7679965 Flash memory with improved programming precision 4 2007
7660166 Method of improving programming precision in flash memory 2 2007
* 2008/0181,000 Method Of Improving Programming Precision In Flash Memory 40 2007
* 2008/0180,996 Flash Memory With Improved Programming Precision 7 2007
8073648 Measuring threshold voltage distribution in memory using an aggregate characteristic 13 2007
7613045 Operation sequence and commands for measuring threshold voltage distribution in memory 33 2007
* 2009/0135,646 OPERATION SEQUENCE AND COMMANDS FOR MEASURING THRESHOLD VOLTAGE DISTRIBUTION IN MEMORY 8 2007
* 2008/0285,351 MEASURING THRESHOLD VOLTAGE DISTRIBUTION IN MEMORY USING AN AGGREGATE CHARACTERISTIC 181 2007
* Cited By Examiner

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Nov 16, 2017
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00