US Patent No: 7,046,568

Number of patents in Portfolio can not be more than 2000

Memory sensing circuit and method for low voltage operation

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ALSO PUBLISHED AS: 20050169082
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Abstract

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A sensing module operates with a sense amplifier sensing a conduction current of a memory cell via a coupled bit line under constant voltage condition in order to minimize bit-line to bit-line coupling. The rate of discharge of a dedicated capacitor as measured by a change in the voltage drop there across in a predetermined period is used to indicate the magnitude of the conduction current. The voltage cannot drop below a minimum level imposed by a circuit for maintaining the constant voltage condition on the bit line. A voltage shifter is used to boost the voltage during the discharge and to unboost the voltage after the discharge, so that the change in voltage drop properly reflects the rate of discharge without running into the minimum level.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SANDISK TECHNOLOGIES INC.PLANO, TX1696

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cernea, Raul-Adrian Santa Clara, CA 162 4299

Cited Art Landscape

Patent Info (Count) # Cites Year
 
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Datalight, Inc. (1)
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FUJITSU LIMITED (1)
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NEC ELECTRONICS CORPORATION (1)
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SANDISK 3D LLC (1)
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SHARP KABUSHIKI KAISHA (1)
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SONY CORPORATION (1)
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SPANSION LLC (1)
6,504,757 Double boosting scheme for NAND to improve program inhibit characteristics 58 2001
 
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5,949,720 Voltage clamping method and apparatus for dynamic random access memory devices 46 1998
 
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5,093,806 Sensing and decoding scheme for a BiCMOS read/write memory 62 1989

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
SANDISK TECHNOLOGIES INC. (118)
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7,480,181 Non-volatile memory with background data latch caching during read operations 9 2006
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7,616,490 Programming non-volatile memory with dual voltage select gate structure 3 2006
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7,471,567 Method for source bias all bit line sensing in non-volatile storage 7 2007
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7,593,265 Low noise sense amplifier array and method for nonvolatile memory 7 2007
7,468,921 Method for increasing programming speed for non-volatile memory by applying direct-transitioning waveforms to word lines 0 2008
7,593,277 Method for compensated sensing in non-volatile memory 0 2008
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7,447,065 Reducing read disturb for non-volatile storage 9 2008
7,440,318 Reducing read disturb for non-volatile storage 9 2008
7,577,026 Source and drain side early boosting using local self boosting for non-volatile storage 0 2008
7,606,076 Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise 5 2008
7,915,664 Non-volatile memory with sidewall channels and raised source/drain regions 0 2008
8,051,240 Compensating non-volatile storage using different pass voltages during program-verify and read 1 2008
7,719,902 Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage 0 2008
7,957,197 Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node 2 2008
7,499,324 Non-volatile memory and method with control gate compensation for source line bias errors 4 2008
7,800,956 Programming algorithm to reduce disturb with minimal extra time penalty 4 2008
7,796,430 Non-volatile memory using multiple boosting modes for reduced program disturb 3 2008
7,733,703 Method for non-volatile memory with background data latch caching during read operations 2 2008
7,751,244 Applying adaptive body bias to non-volatile storage based on number of programming cycles 3 2008
8,130,552 Multi-pass programming for memory with reduced data storage requirement 0 2008
7,633,802 Non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages 71 2008
7,936,602 Use of data latches in cache operations of non-volatile memories 0 2009
7,852,678 Non-volatile memory with improved sensing by reducing source line current 3 2009
7,978,526 Low noise sense amplifier array and method for nonvolatile memory 3 2009
8,284,606 Compensating for coupling during programming 0 2009
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KABUSHIKI KAISHA TOSHIBA (8)
7,365,018 Fabrication of semiconductor device for flash memory with increased select gate width 6 2005
7,692,987 Semiconductor storage device 2 2008
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8,649,223 Semiconductor storage device 0 2012
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8,559,222 Nonvolatile semiconductor memory 0 2013
 
SANDISK IL LTD. (4)
7,679,965 Flash memory with improved programming precision 2 2007
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MICRON TECHNOLOGY, INC. (2)
7,423,476 Current mirror circuit having drain-source voltage clamp 2 2006
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SANDISK CORPORATION (1)
8,542,529 Non-volatile memory and method with power-saving read and program-verify operations 0 2012

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