Integration of ALD tantalum nitride for copper metallization
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United States of America Patent
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May 23, 2006
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app pub date -
Jun 10, 2004
filing date -
Sep 26, 2001
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Abstract
A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
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