Method for enhancing silicon dioxide to silicon nitride selectivity
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United States of America Patent
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May 23, 2006
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app pub date -
Aug 6, 2001
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Jun 15, 1992
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Abstract
A process for controlling the plasma etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by (1) maintaining various portions of the etch chamber at elevated temperatures, and/ox (2) using an etch chemistry having a fluorohydrocarbon gas containing at least as many hydrogen atoms as fluorine atoms, preferably CH.sub.2F.sub.2 or CH.sub.3F.
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