Liquid-assisted cryogenic cleaning
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United States of America Patent
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Jun 6, 2006
Grant Date -
Dec 23, 2004
app pub date -
Jul 7, 2004
filing date -
Apr 5, 2002
priority date (Note) -
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Abstract
The present invention is directed to the use of a high vapor pressure liquid prior to or simultaneous with cryogenic cleaning to remove contaminants from the surface of substrates requiring precision cleaning such as semiconductors, metal films, or dielectric films. A liquid suitable for use in the present invention preferably has a vapor pressure above 5 kPa and a freezing point below -50.degree. C.
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