Wordline-based source-biasing scheme for reducing memory cell leakage
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United States of America Patent
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Jun 13, 2006
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app pub date -
Mar 30, 2004
filing date -
Mar 30, 2004
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Abstract
A source-biasing mechanism for leakage reduction in SRAM. In standby mode, wordlines are deselected and a source-biasing potential is provided to SRAM cells. In read mode, a selected wordline deactivates the source-biasing potential provided to the selected row of SRAM cells, whereas the remaining SRAM cells on the selected bitline column continue to be source-biased.
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