Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
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United States of America Patent
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Jun 20, 2006
Grant Date -
Jul 22, 2004
app pub date -
Mar 24, 2003
filing date -
Sep 28, 1998
priority date (Note) -
Expired
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Abstract
A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.
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