Pattern compensation techniques for charged particle lithographic masks
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United States of America Patent
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Jun 27, 2006
Grant Date -
Jun 10, 2004
app pub date -
Dec 4, 2002
filing date -
Dec 4, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of producing a particle beam mask and mask structures to allow for the use of dummy fill shapes. This invention overcomes distortion in by adding a dummy shape in unexposed regions and applying a blocking layer to cover the dummy shape. The blocking layer is comprised of an aperture or additional mask mounted close to the mask or can be added to the mask itself.
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