Process for manufacturing a solar cell
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United States of America Patent
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Jul 4, 2006
Grant Date -
Apr 7, 2005
app pub date -
Jun 17, 2002
filing date -
Jun 19, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Process for incorporating a back surface field into a silicon solar cell by depositing a layer of aluminium on the rear surface of the cell, sintering the aluminium at a temperature between 700 and 1000.degree. C., exposing the cell to an atmosphere of a compound of Group V element and diffusing at a temperature of between 950 and 1000.degree.C. so as to dope exposed p-type silicon surfaces with the Group V element. The step of exposing the cell to an atmosphere of a compound of a Group V element is carried separately from the step of sintering the aluminium layer, and subsequent to the step of depositing a layer of aluminium on the rear surface of the cell.
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