PCRAM memory cell and method of making same
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United States of America Patent
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Jul 4, 2006
Issued Date -
N/A
app pub date -
Jul 25, 2002
filing date -
May 11, 2001
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.
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