Method for fabricating trench capacitors for large scale integrated semiconductor memories
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United States of America Patent
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Jul 11, 2006
Grant Date -
Nov 6, 2003
app pub date -
May 12, 2003
filing date -
Nov 10, 2000
priority date (Note) -
Expired
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Abstract
An electrochemical method is provided for producing trenches for trench capacitors in p-doped silicon with a very high diameter/depth aspect ratio for large scale integrated semiconductor memories. Trenches (macropores) having a diameter of less than about 100 nm and a depth of more than 10 .mu.m can be produced on p-doped silicon having a very low resistivity at a high etching rate.
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