Process for improving dielectric properties in low-k organosilicate dielectric material

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United States of America Patent

PATENT NO 7074727
APP PUB NO 20050010000A1
SERIAL NO

10615628

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Abstract

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Low-k organosilicate dielectric material can be exposed to a series of reagents, including a halogenation reagent, an alkylation reagent, and a termination reagent, in order to reverse degradation of dielectric properties caused by previous processing steps.

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Patent Owner(s)

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TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiu, Yuan-Hung Taipei, TW 47 691
Hsu, Peng-Fu Hsinchu, TW 48 2967
Lu, Yung-Cheng Taipei, TW 179 2493
Shieh, Jyu-Horng Hsinchu, TW 138 1171
Tao, Hun-Jan Hsin-Chu, TW 165 3566

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