Photoelectric conversion device
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United States of America Patent
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Jul 11, 2006
Grant Date -
Apr 8, 2004
app pub date -
Sep 17, 2003
filing date -
Oct 8, 2002
priority date (Note) -
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Abstract
A photoelectric conversion device capable of improving an open-circuit voltage is obtained. In this photoelectric conversion device, many of crystal grains contained in a third non-single-crystalline semiconductor layer have major axes substantially perpendicular to a main surface of a substrate on an interfacial portion between at least either a first non-single-crystalline semiconductor layer or a second non-single-crystalline semiconductor layer and the third non-single-crystalline semiconductor layer, and many of crystal grains contained in either semiconductor layer have major axes substantially parallel to the main surface of the substrate on the aforementioned interfacial portion.
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