Semiconductor device having a low-resistance gate electrode
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United States of America Patent
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Jul 18, 2006
Grant Date -
Jan 27, 2005
app pub date -
Aug 25, 2004
filing date -
Nov 29, 2001
priority date (Note) -
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Abstract
A gate electrode structure in a semiconductor device has a doped polysilicon (DOPOS) film, a tungsten silicide film, a tungsten silicide nitride film, a tungsten nitride film and a tungsten film consecutively as viewed from the substrate. The tungsten silicide nitride film is formed between the tungsten silicide film and the tungsten nitride film by a plurality of heat treatments. The tungsten silicide nitride film has a small thickness of 2 to 5 nm and has a lower interface resistance for achieving a low-resistance gate electrode, suited for a higher-speed operation of the semiconductor device.
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