Boron incorporated diffusion barrier material
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United States of America Patent
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Aug 1, 2006
Grant Date -
Apr 29, 2004
app pub date -
Oct 16, 2003
filing date -
Aug 24, 1999
priority date (Note) -
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Abstract
A diffusion barrier layer comprising TiN.sub.xB.sub.y is disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the TiN layer. The diffusion barrier layer can also be fabricated by forming a TiN.sub.xB.sub.y layer using a TDMAT process including boron. The diffusion barrier layer can also be fabricated by forming a TiN.sub.xB.sub.y layer using a CVD process. The diffusion barrier layer is of particular utility in conjunction with tungsten or tungsten silicide conductive layers formed by CVD.
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