Implantation of deuterium in MOS and DRAM devices
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United States of America Patent
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Aug 8, 2006
Grant Date -
Nov 17, 2005
app pub date -
May 17, 2004
filing date -
May 17, 2004
priority date (Note) -
Expired
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Abstract
A structure and method passivates dangling silicon bonds by the introduction of deuterium into a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) by ion implantation. The process of implantation provides precise placement of deuterium at optimum locations within the gate stack to create stable silicon-deuterium bond terminations at the Si--SiO.sub.2 interface within the gate-channel region. The deuterium is encapsulated in the MOSFET by the use of a Silicon Nitride (SiN) barrier mask. The ability of deuterium to passivate dangling silicon bonds is maximized by removing hydrogen present in the MOSFET and by use of an absorption layer to create a deuterium rich region.
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