Photoelectric conversion device and method of production thereof

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United States of America Patent

PATENT NO 7087831
SERIAL NO

10663752

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Abstract

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A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one of the charge transfer layers comprises a semiconductor acicular crystal layer comprising an aggregate of acicular crystals or a mixture of an acicular crystal and another crystal, and a method of producing the device are disclosed. Consequently, a photoelectric conversion device being capable of smoothly carrying out transfer of electrons and having high photoelectric conversion efficiency is provided.

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Patent Owner(s)

Patent OwnerAddress
CANON KABUSHIKI KAISHATOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Den, Tohru Tokyo, JP 100 5685
Okura, Hiroshi Kanagawa-ken, JP 28 313

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