Single phase fluid imprint lithography method
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United States of America Patent
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Aug 15, 2006
Grant Date -
Apr 7, 2005
app pub date -
Oct 2, 2003
filing date -
Oct 2, 2003
priority date (Note) -
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Abstract
The present invention is directed toward a method for reducing pattern distortions in imprinting layers by reducing gas pockets present in a layer of viscous liquid deposited on a substrate. To that end, the method includes varying a transport of the gases disposed proximate to the viscous liquid. Specifically, the atmosphere proximate to the substrate wherein a pattern is to be recorded is saturated with gases that are either highly soluble, highly diffusive, or both with respect to the viscous liquid being deposited. Additionally, or in lieu of saturating the atmosphere, the pressure of the atmosphere may be reduced.
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