Plasma immersion ion implantation process
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United States of America Patent
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Aug 22, 2006
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N/A
app pub date -
Jan 28, 2005
filing date -
Aug 11, 2000
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Abstract
A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma while minimizing deposition and minimizing etching by holding the temperature of the workpiece within a temperature range that is above a workpiece deposition threshold temperature and below a workpiece etch threshold temperature.
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