Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
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United States of America Patent
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Aug 22, 2006
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N/A
app pub date -
Sep 2, 2004
filing date -
Aug 29, 2002
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Abstract
In one implementation, a plasma etching method comprises forming a Ge.sub.xSe.sub.y chalcogenide comprising layer over a substrate. A mask comprising an organic masking material is formed over the Ge.sub.xSe.sub.y chalcogenide comprising layer. The mask comprises a sidewall. At least prior to plasma etching the Ge.sub.xSe.sub.y comprising layer, the sidewall of the mask is exposed to a fluorine comprising material. After said exposing, the Ge.sub.xSe.sub.y chalcogenide comprising layer is plasma etched using the mask and a hydrogen containing etching gas. The plasma etching forms a substantially vertical sidewall of the Ge.sub.xSe.sub.y chalcogenide comprising layer which is aligned with a lateral outermost extent of the sidewall of the mask.
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