Methods for making semiconductor structures having high-speed areas and high-density areas
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United States of America Patent
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Aug 22, 2006
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app pub date -
Apr 13, 2005
filing date -
Aug 30, 2001
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Abstract
Methods for making a semiconductor structure are discussed. The methods include forming openings in a high-density area and a high-speed area, and forming a metallization layer simultaneously into the high-density area and the high-speed area. The metallization layer includes a combination of substances and compounds that reduce vertical resistance, reduce horizontal resistance, and inhibit cross-diffusion.
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