Methods of forming a semiconductor device having a metal gate electrode and associated devices
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United States of America Patent
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Aug 29, 2006
Grant Date -
Jan 27, 2005
app pub date -
Feb 17, 2004
filing date -
Feb 19, 2003
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Abstract
Methods of forming a semiconductor device having a metal gate electrode include sequentially forming a gate insulator, a gate polysilicon layer and a metal-gate layer on a semiconductor substrate. The metal-gate layer and the gate polysilicon layer are sequentially patterned to form a gate pattern comprising a stacked gate polysilicon pattern and a metal-gate pattern. An oxidation barrier layer is formed to cover at least a portion of a sidewall of the metal-gate pattern.
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